Conductor Etch

As the semiconductor industry continues to shrink critical feature sizes and improve device performance, a variety of new etch challenges have emerged.  For conductor etch, these challenges include processing smaller features, new materials, and new transistor structures on the wafer.  Due to decreasing feature sizes, the etch process can now require atomic-level control across a 300 mm wafer.  The incorporation of new metal gates and high-k dielectric materials in the device stack requires advanced multi-film etching capability.  Advanced chip designs require etching of newer structures such as recessed channel and three-dimensional (3-D) gate transistors, as well as conventional planar transistors.  Furthermore, the adoption of double patterning techniques to address lithography limitations at the sub-45 nm nodes is driving the etch process to define the pattern on the wafer as well as reproduce it.  All of these challenges require today’s conductor etch systems to provide advanced capabilities, while still providing higher productivity than ever before.
TCP Technology Lam’s patented TCP source technology continues to provide leading-edge capability for advanced conductor etch applications through the sub-45 nm technology node.  By efficiently coupling RF power into plasma at low pressures, Transformer Coupled Plasma™ technology provides capability to etch nanoscale features into silicon and metal films.  The advanced TCP source design ensures a uniform, high-density plasma across the wafer, without requiring magnetic enhancements that could cause device damage.  With a wide process window over a range of power, chemistry, and pressure combinations, TCP technology provides the flexibility required to perform multiple etch steps in the same chamber (in situ), such as those required by metal gate, shallow trench isolation, dual stress liner, and double patterning applications.  With its TCP technology, Lam Research has become a leading provider of conductor etch equipment at the most advanced semiconductor manufacturers worldwide.

2300® Kiyo® Conductor Etch Product Family 2300® Versys® Kiyo® 2300® Versys® Kiyo45™ 2300® Kiyo C Series
Now in its third generation, the 2300 Kiyo product family combines evolutionary advances and revolutionary technology to provide exceptional critical dimension (CD) uniformity and productivity for a wide range of front-end-of-line (FEOL) and middle-of-line (MOL) conductor etch applications.  Lam’s etch products perform production-proven in situ etch of complex gate, shallow trench isolation, strained silicon, and double patterning film stacks using dynamic tuning and control of wafer temperature, gas distribution, and plasma uniformity.  In addition, proprietary pre-coat and post-etch chamber clean techniques ensure that every wafer sees the same environment for superior repeatability, as well as high uptime and yield.
2300® Versys® Metal Etch Product Family 2300® Versys® Metal 2300® Versys® Metal45™ 2300® Versys® Metal L
Lam Research metal etch systems are used for the majority of aluminum metal etch processes that create the wiring in memory devices.  The 2300 Versys Metal45 etch system leverages Lam’s proprietary TCP technology to provide a flexible platform for back-end-of-line (BEOL) metal etch processes.  Applications include etching high-density aluminum lines, aluminum pads, and the critical dimensions of TiN metal hardmasks that are then used to define the tightest copper metal lines in logic circuits.  The system utilizes proprietary chamber cleaning technology to provide high availability, high yield, and exceptional process repeatability.