LED Manufacturing Solutions
Light-emitting diodes (LEDs) are increasingly found in everyday products, from mobile phones and handheld media devices to televisions and car displays. Demand for high-performance LEDs – bright, accurate in color, and energy efficient – continues to grow as new consumer applications emerge.
With growing consumer applications, LED manufacturers require production-worthy, high-productivity equipment that delivers repeatable process results for high device yield.
Lam Research has over 25 years of experience with plasma etch, thin film dielectrics, metallization, and photoresist strip technologies that can be applied to the LED manufacturing market. We have leveraged our proven technologies to develop a wide range of LED-specific process solutions for front-end chip manufacturing and back-end packaging that address the challenges of cost-efficient, high-volume production.
Our industry-leading plasma etch systems deliver excellent uniformity and productivity at a low cost of ownership. Systems are used in high-volume production for a diverse set of processes and support both 6- and 8-inch capability on the same chamber. LED applications include patterned sapphire substrate (PSS); oxide mask open; and Al, GaN, and W etch.
Lam’s proven plasma enhanced chemical vapor deposition (PECVD) products are capable of depositing low-temperature passivation, hardmask, and packaging films with low-defectivity, excellent uniformity and hermetic film properties, and high productivity. LED application-specific films include SiO2, SiN, SiON, UVSiN, and TEOS.
Our production-proven systems deliver copper-plated thicknesses of 50 μm and higher with high throughput. For LED applications, chemistries include Cu, Ni, and Au. Modular system architecture allows for configuration flexibility that is expandable to 16 cells. Trays/carriers of 4 to 12 inches in diameter are supported.
Lam’s dry strip systems provide high throughput for a wide range of photoresist strip and clean, descum, and light etch solutions. Dual source technology – downstream microwave or RF bias – provides lower chemical costs compared to wet clean approaches. Substrates from 2 to 8 inches in diameter are supported.
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