{"id":13167,"date":"2018-01-11T14:48:35","date_gmt":"2018-01-11T22:48:35","guid":{"rendered":"https:\/\/lamrstage.wpengine.com\/product\/dsie-product-family\/"},"modified":"2019-05-17T11:05:39","modified_gmt":"2019-05-17T18:05:39","slug":"dsie-product-family","status":"publish","type":"product","link":"https:\/\/www.lamresearch.com\/de\/product\/dsie-product-family\/","title":{"rendered":"DSiE PRODUKTFAMILIE"},"content":{"rendered":"<p>Bei der Herstellung von integrierten Schaltkreisen (ICs) ist \u00c4tztechnologie notwendig, um die komplizierten Strukturen eines Chips zu formen. Bei der Herstellung von mikro-elektromechanischen Systemen (MEMS) wird dieser Vorgang verwendet, um vielf\u00e4ltigste Strukturen auszubilden, beispielsweise gro\u00dfe Hohlr\u00e4ume und tiefe \u00c4tzgr\u00e4ben mit hoher Streckung (HAR).<\/p>\n<p>Lams DSiE\u2122-Produktfamilie erm\u00f6glicht au\u00dferordentliche Prozesssteuerung mit hoher Produktivit\u00e4t f\u00fcr verschiedene kritische und nicht-kritische Anwendungen von Siliziumtiefen\u00e4tzen, einschlie\u00dflich MEMS, Leistungshalbleiter, passive Komponenten, Sensoren und Umwandler.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Diese Produkte bieten eine hervorragende Prozesskontrolle bei hoher Produktivit\u00e4t f\u00fcr verschiedene kritische und nicht kritische Anwendungen des tiefen \u00c4tzens von Silizium.<\/p>\n","protected":false},"author":31,"featured_media":10750,"parent":0,"menu_order":202,"template":"","meta":{"_acf_changed":false,"_relevanssi_hide_post":"","_relevanssi_hide_content":"","_relevanssi_pin_for_all":"","_relevanssi_pin_keywords":"","_relevanssi_unpin_keywords":"","_relevanssi_related_keywords":"","_relevanssi_related_include_ids":"","_relevanssi_related_exclude_ids":"","_relevanssi_related_no_append":"","_relevanssi_related_not_related":"","_relevanssi_related_posts":"","_relevanssi_noindex_reason":"","footnotes":""},"process":[],"solution":[634,321,325,333,349],"technology":[582,292],"class_list":["post-13167","product","type-product","status-publish","has-post-thumbnail","hentry","solution-advanced-packaging-de","solution-analog-mixed-signal-de","solution-discrete-power-devices-de","solution-optoelectronics-photonics-de","solution-sensors-transducers-de","technology-deep-reactive-ion-etch-drie","technology-drie-de"],"acf":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.4 - 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F\u00fcr kritische Anwendungen, beispielsweise Strukturen f\u00fcr Gyroskope und Tr\u00e4gheitssensoren, ist eine exakte Kontrolle und Steuerung von \u00c4tzprofilwinkel, Neigung, Asymmetrie und Gleichf\u00f6rmigkeit erforderlich. Semikritische Silizium-Durchkontaktierungen (TSVs), die f\u00fcr das dreidimensionale Packaging dieser Bauelemente verwendet werden oder das Graben\u00e4tzen bei Leistungshalbleitern ben\u00f6tigen ausgezeichnete Profilwinkel und Tiefengleichf\u00f6rmigkeit. Nicht kritische MEMS-Anwendungen, wie Cap Etch beim Wafer-level Packaging (WLP), ben\u00f6tigen einen hohen Durchsatz, Tiefengleichf\u00f6rmigkeit und glatte Seitenw\u00e4nde. Es ist eine ziemliche Herausforderungen, diese weit gef\u00e4cherten Kriterien f\u00fcrs \u00c4tzen zu erf\u00fcllen und gleichzeitig eine hohe Produktivit\u00e4t aufrecht zu erhalten. Eine weitere Hauptanforderung ist die Erreichung von Kosteneffizienz aufgrund der mengenm\u00e4\u00dfig kleinen Fertigungslosgr\u00f6\u00dfen f\u00fcr viele dieser Bauteile.<\/p>\n","key_benefits":["Hohe \u00c4tzraten und Produktivit\u00e4t mit Flexibilit\u00e4t, um sowohl Bosch- als auch steady-state Prozesse zu nutzen","Einstellbare Tiefengleichf\u00f6rmigkeit durch Gasflussanteil und mit Umwandler gepaarte kapazitive Steuerm\u00f6glichkeiten","Hochentwickelte Prozesssteuerung f\u00fcr verbesserte Symmetrie und Neigungsminimierung","Steuerbare CD durch schnellen Gaswechsel"],"product_offerings":["DSiE\u2122 III","DSiE\u2122 F Series","DSiE\u2122 G Series"],"key_applications":["Siliziumtief\u00e4tzen f\u00fcr MEMS (Graben, Hohlraum)","Silizium-Graben\u00e4tzen f\u00fcr Leistungshalbleiter","Silizium-Durchkontaktierung f\u00fcr WLP"],"featured_media_src":"https:\/\/www.lamresearch.com\/wp-content\/uploads\/2018\/01\/DSiE_Products_1920x600.jpg","drawer_background_image":{"id":10750,"src":"https:\/\/www.lamresearch.com\/wp-content\/uploads\/2018\/01\/DSiE_Products_1920x600.jpg"},"_links":{"self":[{"href":"https:\/\/www.lamresearch.com\/de\/wp-json\/wp\/v2\/product\/13167","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.lamresearch.com\/de\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.lamresearch.com\/de\/wp-json\/wp\/v2\/types\/product"}],"author":[{"embeddable":true,"href":"https:\/\/www.lamresearch.com\/de\/wp-json\/wp\/v2\/users\/31"}],"version-history":[{"count":0,"href":"https:\/\/www.lamresearch.com\/de\/wp-json\/wp\/v2\/product\/13167\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.lamresearch.com\/de\/wp-json\/wp\/v2\/media\/10750"}],"wp:attachment":[{"href":"https:\/\/www.lamresearch.com\/de\/wp-json\/wp\/v2\/media?parent=13167"}],"wp:term":[{"taxonomy":"process","embeddable":true,"href":"https:\/\/www.lamresearch.com\/de\/wp-json\/wp\/v2\/process?post=13167"},{"taxonomy":"solution","embeddable":true,"href":"https:\/\/www.lamresearch.com\/de\/wp-json\/wp\/v2\/solution?post=13167"},{"taxonomy":"technology","embeddable":true,"href":"https:\/\/www.lamresearch.com\/de\/wp-json\/wp\/v2\/technology?post=13167"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}