{"id":12239,"date":"2018-02-22T11:44:10","date_gmt":"2018-02-22T19:44:10","guid":{"rendered":"https:\/\/lamrstage.wpengine.com\/products\/our-solutions\/discretes-power-devices-solutions\/"},"modified":"2021-07-29T12:53:40","modified_gmt":"2021-07-29T19:53:40","slug":"discretes-power-devices-solutions","status":"publish","type":"page","link":"https:\/\/www.lamresearch.com\/zh-hant\/products\/our-solutions\/discretes-power-devices-solutions\/","title":{"rendered":"Discretes &#038; Power Devices Solutions"},"content":{"rendered":"","protected":false},"excerpt":{"rendered":"","protected":false},"author":31,"featured_media":8112,"parent":2452,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_acf_changed":false,"_relevanssi_hide_post":"","_relevanssi_hide_content":"","_relevanssi_pin_for_all":"","_relevanssi_pin_keywords":"","_relevanssi_unpin_keywords":"","_relevanssi_related_keywords":"","_relevanssi_related_include_ids":"","_relevanssi_related_exclude_ids":"","_relevanssi_related_no_append":"","_relevanssi_related_not_related":"","_relevanssi_related_posts":"","_relevanssi_noindex_reason":"","footnotes":""},"class_list":["post-12239","page","type-page","status-publish","has-post-thumbnail","hentry"],"acf":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.3 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Discretes &amp; Power Devices | Our Solutions | Lam Research<\/title>\n<meta name=\"description\" content=\"Discrete devices are single semiconductors like diodes or transistors. Power transistors are an important class of discrete devices and are used in a range of applications to regulate voltages, help lower power consumption, and reduce heat generation. For example, they are essential components in circuits aimed at extending battery life in portable electronics. Emerging wide-bandgap power devices (e.g., GaN and SiC) offer both low- and high-power applications at higher frequencies, addressing consumer electronics as well as higher-power applications in the power grid, energy, transportation, and automotive sectors. Examples of key power devices based upon silicon or wide-bandgap materials include power diodes, thyristors, power metal-oxide semiconductor field effect transistors (MOSFETs), and insulated gate bipolar transistors (IGBTs). These types of devices require low-cost manufacturing from reliable, high-productivity, and cost-effective equipment.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"http:\/\/www.lamresearch.com\/zh-hant\/products\/our-solutions\/discretes-power-devices-solutions\/\" \/>\n<meta property=\"og:locale\" content=\"zh_TW\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Discretes &amp; Power Devices | Our Solutions | Lam Research\" \/>\n<meta property=\"og:description\" content=\"Discrete devices are single semiconductors like diodes or transistors. Power transistors are an important class of discrete devices and are used in a range of applications to regulate voltages, help lower power consumption, and reduce heat generation. For example, they are essential components in circuits aimed at extending battery life in portable electronics. Emerging wide-bandgap power devices (e.g., GaN and SiC) offer both low- and high-power applications at higher frequencies, addressing consumer electronics as well as higher-power applications in the power grid, energy, transportation, and automotive sectors. Examples of key power devices based upon silicon or wide-bandgap materials include power diodes, thyristors, power metal-oxide semiconductor field effect transistors (MOSFETs), and insulated gate bipolar transistors (IGBTs). 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