图形化解决方案

Line edge roughness (LER) is a variation in the width of a lithographic pattern along one edge of a structure inside a chip. Line edge roughness can be a critical variation source and defect mechanism in advanced logic and memory devices, and can lead to poor device performance or even device failure [1~3]. Deposition-etch cycling is an effective technique to reduce line edge roughness. In this study, we demonstrate how virtual fabrication can provide guidance on how to perform deposition/etch cycling in order to reduce LER.

In this article, we demonstrate a pathfinding technique for a novel Vertical DRAM technology. First, we identify important process parameters (defined by current semiconductor production equipment capabilities) that strongly impact yield. By using a virtual model, we then perform experimental optimization of the Vertical DRAM device across specific target ranges, to help predict and improve the yield of this next generation product.