Copper and other metals are deposited to create the electrical connections that are used in advanced wafer-level packaging (WLP) and through-silicon via (TSV) structures. These tiny conducting parts help enable shrinking overall device dimensions to produce smaller, faster, and more powerful mobile electronics.
The SABRE® 3D family combines Lam’s proven SABRE Electrofill® technology with additional innovation to deliver the high-quality films needed for WLP and TSV applications at high productivity.
Electroplating of copper and other metals is used for a number of advanced WLP applications, such as forming conductive bumps and redistribution layers, and for filling TSVs. While similar to copper fill for back-end-of-line (BEOL) damascene, electroplating for WLP and TSV is at a much larger scale – on the order of microns (10-6 m) versus angstroms (10-10 m) of film to be deposited. This often requires long deposition times and multi-step processing. Challenges include improving within-wafer uniformity and within-die co-planarity at high plating rates, reducing cost of ownership, minimizing defects, and achieving reliable and void-free microbumps and solder joints.