Creating features with atomic precision
Etch processes help create chip features by selectively removing films and materials that have been deposited on the wafer. These processes involve fabricating increasingly small and complex features with complicated combinations of materials that need to be removed. The primary technology, reactive ion etch (RIE), activates the wafer surface with ions (charged particles) to remove material. Advanced etch techniques, such as atomic layer etching (ALE) are capable of removing a few atomic layers of material at a time. While conductor etch processes precisely shape electrically active components like transistors, dielectric etch forms the insulating structures that protect conducting parts. Etch processes also create the tall, high-aspect ratio features, such as through-silicon vias (TSVs), that allow packaging of chips together and for micro-electromechanical systems (MEMS).
Our plasma etch systems deliver the high-performance, high-productivity capabilities needed to form exacting structures – whether tall and narrow, short and wide, or measured in only a few angstroms.
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FEBRUARY 9, 2022
Today, I am proud and excited to officially announce the availability of three new precision selective etch innovations from Lam Research: Argos®, Prevos™, and Selis®. Designed to complement and extend Lam’s industry-leading etch solutions portfolio, these breakthrough products are enabling chipmakers to etch and modify films with ultra-high selectivity and angstrom-level precision to achieve the most advanced integrated circuit (IC) performance capabilities and accelerate their 3D roadmaps.
NOVEMBER 14, 2016
Greek philosopher Democritus (460-370 BC) first proposed the existence of an ultimate particle, which he described as “atomos.” He probably never dreamed that one day there would be devices so small and complex that they require atomic-scale processing. Our smartphones and other connected devices are driving the need for smaller and more powerful chips, which in turn drive the need for complex integration schemes and new component structures.