Etch - Lam Research

Etch Products

Creating features with atomic precision

Etch processes help create chip features by selectively removing films and materials that have been deposited on the wafer. These processes involve fabricating increasingly small and complex features with complicated combinations of materials that need to be removed. The primary technology, reactive ion etch (RIE), activates the wafer surface with ions (charged particles) to remove material. Advanced etch techniques, such as atomic layer etching (ALE) are capable of removing a few atomic layers of material at a time. While conductor etch processes precisely shape electrically active components like transistors, dielectric etch forms the insulating structures that protect conducting parts. Etch processes also create the tall, high-aspect ratio features, such as through-silicon vias (TSVs), that allow packaging of chips together and for micro-electromechanical systems (MEMS).

Our plasma etch systems deliver the high-performance, high-productivity capabilities needed to form exacting structures – whether tall and narrow, short and wide, or measured in only a few angstroms.


Our Products

Coronus Product Family

Plasma Bevel Etch and Deposition

Coronus systems focus on the bevel edge to enhance overall yield. Semiconductor processing can cause residues and roughness to accumulate along the wafer edge where they may flake off, drift to other areas, and create defects that cause a device to fail. Coronus etch products remove bevel residues and Coronus deposition protect the wafer bevel from damage.

Flex Product Family

Atomic Layer Etch (ALE) Reactive Ion Etch (RIE)

Our dielectric etch systems offer application-focused capabilities for creating a wide range of challenging structures in advanced devices.

Kiyo Product Family

Reactive Ion Etch (RIE)

These market-leading conductor etch products deliver the high-performance precision and control at high productivity needed for critical device features.

Reliant Etch Products

Deep Reactive Ion Etch (DRIE) Reactive Ion Etch (RIE) Reliant Systems

Our Reliant etch products enable roadmaps for Specialty Technologies and extend the productive life of fabs.

Selective Etch Product Family

Selective Etch

Breakthrough portfolio delivers isotropic material removal with angstrom-scale precision and ultra-high selectivity capabilities for 3D architectures and advanced logic and foundry applications.

Sense.i Product Family

Reactive Ion Etch (RIE)

Our latest etch platform offers unparalleled system intelligence in a compact, high-density architecture to deliver process performance at the highest productivity.

Syndion Product Family

Deep Reactive Ion Etch (DRIE) Reactive Ion Etch (RIE)

For deep etch applications, this product family provides the exceptional across-wafer uniformity control needed for critical high aspect ratio features.

Vantex Product Family

Reactive Ion Etch (RIE)

Designed for the Sense.i platform, Vantex redefines high aspect ratio etching with innovations in technology and Equipment Intelligence.

Versys Metal Product Family

Reactive Ion Etch (RIE)

These metal etch products provide excellent process control at high-productivity for electrical connection and metal hardmask applications.

Related blog posts

  • Accelerating the path to 3D: Introducing Lam precision selective etch solutions

    FEBRUARY 9, 2022

    Today, I am proud and excited to officially announce the availability of three new precision selective etch innovations from Lam Research: Argos®, Prevos™, and Selis®. Designed to complement and extend Lam’s industry-leading etch solutions portfolio, these breakthrough products are enabling chipmakers to etch and modify films with ultra-high selectivity and angstrom-level precision to achieve the most advanced integrated circuit (IC) performance capabilities and accelerate their 3D roadmaps.

  • Tech Brief: All About ALE

    NOVEMBER 14, 2016

    Greek philosopher Democritus (460-370 BC) first proposed the existence of an ultimate particle, which he described as “atomos.” He probably never dreamed that one day there would be devices so small and complex that they require atomic-scale processing. Our smartphones and other connected devices are driving the need for smaller and more powerful chips, which in turn drive the need for complex integration schemes and new component structures.