製造具原子級精密度的特徵結構
透過選擇性地去除在沉積期間添加的介電層(絕緣)和金屬(導電)材料，蝕刻製程可用來製作晶片的特徵結構。這些製程涉及製造越來越小、複雜、高且窄的特徵結構，並使用多種類型的材料。主要的技術，反應離子蝕刻 (RIE)，是用離子(帶電微粒) 轟擊晶片表面來去除材料。針對最微小的特徵結構，原子層蝕刻 (ALE) 可一次去除一些原子層的材料。而導體蝕刻製程可精確形成電晶體這類的關鍵電子元件，介電層蝕刻則可形成保護導電部分的絕緣結構。蝕刻製程還能創建高的柱狀特徵，例如，用在矽穿孔(TSV)中來連接晶片、以及用在微機電系統(MEMS)中。
Lam Research的電漿蝕刻系統可提供形成精確結構所需的高效能、高生產力功能 ─ 無論是高且窄、短且寬、還是僅有幾奈米大小的結構均適用。
電漿蝕刻
產品
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