製造具原子級精密度的特徵結構
透過選擇性地去除在沉積期間添加的介電層(絕緣)和金屬(導電)材料，蝕刻製程可用來製作晶片的特徵結構。這些製程涉及製造越來越小、複雜、高且窄的特徵結構，並使用多種類型的材料。主要的技術，反應離子蝕刻 (RIE)，是用離子(帶電微粒) 轟擊晶片表面來去除材料。針對最微小的特徵結構，原子層蝕刻 (ALE) 可一次去除一些原子層的材料。而導體蝕刻製程可精確形成電晶體這類的關鍵電子元件，介電層蝕刻則可形成保護導電部分的絕緣結構。蝕刻製程還能創建高的柱狀特徵，例如，用在矽穿孔(TSV)中來連接晶片、以及用在微機電系統(MEMS)中。
Lam Research的電漿蝕刻系統可提供形成精確結構所需的高效能、高生產力功能 ─ 無論是高且窄、短且寬、還是僅有幾奈米大小的結構均適用。
電漿蝕刻
產品
CORONUS系列產品
Plasma Bevel Etch and Deposition
Coronus 系統專注於晶圓邊緣，以提高產品良率。半導體製程會導致殘留物和微粗糙沿著晶圓邊緣積聚，它們可能會剝落、漂移到其他區域並產生導致元件失效的缺陷。Coronus 刻蝕產品可去除邊緣殘留物，Coronus 沉積可保護晶圓邊緣不受損害。
Syndion 系列產品
反應離子蝕刻（RIE） 深反應離子蝕刻（DRIE）
對於深蝕刻應用，該產品系列提供了實現關鍵高深寬比結構所需的卓越整片晶圓均勻度控制。
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