The need for increasingly dense, highly performant and energy efficient semiconductors is driving new technological inflection points to support the development of advanced logic and memory chips. As FinFET devices are beginning to reach their scaling limits, leading chipmakers are transitioning to gate-all-around (GAA) or nanosheet structures. In memory, NAND flash has already successfully shifted to three dimensional structures – dynamic random access memory (DRAM) is expected to follow soon.
These technological inflection points necessitate a three-dimensional approach to chipmaking, in which materials are removed from wafer surfaces both selectively and isotropically – or uniformly in all directions. To achieve this, chipmakers require new extraordinarily complex manufacturing techniques to perform previously unthinkable processes like vertical and lateral sculpting of nanoscale features that require angstrom-level precision to avoid removing, modifying, or damaging other critical material layers during the etch process.
Lam’s breakthrough suite of selective etch solutions delivers the ultra-high selectivity and precision etch capabilities needed to develop and manufacture 3D advanced logic and memory chip structures.