存储单元——存储电子数据的芯片组件——包括短时易失性(如DRAM)和长期非易失性(如闪存)两个存储类型。DRAM是主要的“工作”(活跃)存储器,闪存则用于以紧凑的方式存储大量数据。为了增加器件密度以提高存储容量,DRAM构件继续缩小,而NAND闪存已经转向3D架构,这些给加工工艺带来了更多的挑战。例如,3D NAND中的多个层次很容易受到应力的影响,高深宽比通道中的任何瑕疵都可能会造成短路和干扰。对于填补有源器件与存储类器件之间空白的新型存储器,由于采用难以加工的新型材料,其生产也是困难重重。因此,需要极佳的工艺控制能力、灵活性和生产力。
先进存储器
我们的解决方案ALTUS产品系列
Atomic Layer Deposition (ALD) 化学气相沉积(CVD)
结合CVD和ALD技术,这些市场领先的系统为先进的钨金属化应用沉积高度共形的金属膜。
CORONUS产品系列
Plasma Bevel Etch and Deposition
Coronus 产品专注于晶圆边缘的处理,以提高产品良率。半导体工艺会导致残留物和粗糙度沿着晶圆边缘积聚,并且它们可能会剥落、漂移到其它区域并产生导致器件失效的缺陷。Coronus 刻蚀产品可去除晶圆边缘残留物,Coronus 沉积产品可保护晶圆边缘不受损害。
STRIKER产品系列
Atomic Layer Deposition (ALD)
使用先进的ALD技术,这些产品提供纳米级尺寸下器件关键工艺所需的介电薄膜。
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Tech Brief: ABCs of New Memory
APRIL 16, 2018From PCRAM and MRAM to RRAM and more, there’s a whole new alphabet soup of memory technologies making their way to the fab. Fueling this development are technology advances in gaming and mobile products and the growth of cloud computing – important applications that are stretching the capabilities of today’s mainstream memory technologies.
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ALD Tungsten Solves Capacity Challenges in 3D NAND Device Manufacturing
JANUARY 22, 2019Our increasingly connected and ever “smarter” world generates increasing amounts of data, putting pressure on manufacturers who face new technical challenges in delivering the increasing capacity required for processing and storage. The ALD Tungsten process is helping 3D NAND manufacturers overcome the technical challenges of producing memory chips with higher storage capacity.