互連構成了複雜的佈線,用來連接晶片上數十億個獨立單元,包括電晶體、電容等。隨著越來越小的元件緊密地放置在一起,因此也需要更多的互連層,這使連結晶片上的所有單元也越來越具挑戰性。事實上,隨著特徵結構尺寸的持續微縮,互連結構已成為現今最先進晶片的速度瓶頸。因此,需要開發能把金屬連接的電阻降至最低的技術以及創新的介電材料,以提升其絕緣能力。為了生產最先進的高效能電子元件,先進的互連結構涉及狹窄的幾何與複雜的薄膜層,需要更靈活、更精密的製程功能來實現。
互連
解決方案ALTUS系列產品
Atomic Layer Deposition (ALD) 化學氣相沉積(CVD)
結合化學氣相沉積(CVD)和原子層沉積(ALD)技術,這些領先市場的系統可為先進的鎢金屬化應用沉積出所需之高度均勻一致的(conformal)薄膜。
CORONUS系列產品
Plasma Bevel Etch and Deposition
Coronus 系統專注於晶圓邊緣,以提高產品良率。半導體製程會導致殘留物和微粗糙沿著晶圓邊緣積聚,它們可能會剝落、漂移到其他區域並產生導致元件失效的缺陷。Coronus 刻蝕產品可去除邊緣殘留物,Coronus 沉積可保護晶圓邊緣不受損害。
Syndion 系列產品
反應離子蝕刻(RIE) 深反應離子蝕刻(DRIE)
對於深蝕刻應用,該產品系列提供了實現關鍵高深寬比結構所需的卓越整片晶圓均勻度控制。
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Perspectives on Advanced Interconnect Developments
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