Transistors – the “brains” of a chip – are tiny switches that control the flow of electricity, and there can literally be billions of these on a single integrated circuit. Demand for smaller, more powerful electronics is driving the development of new transistor architectures like 3D FinFET designs and the use of specialty materials such as high-k/metal gates. These in turn allow continued shrinking of device feature sizes. With dimensions for the latest transistors now at the atomic level, they are extremely challenging to manufacture. To ensure the high performance expected of these advanced devices, manufacturing capabilities that deliver exceptional precision and control in forming the tiny features are needed.
Our Solutions
Coronus systems focus on the bevel edge to enhance overall yield. Semiconductor processing can cause residues and roughness to accumulate along the wafer edge where they may flake off, drift to other areas, and create defects that cause a device to fail. Coronus etch products remove bevel residues and Coronus deposition protect the wafer bevel from damage.
Our Reliant deposition products enable roadmaps for Specialty Technologies and extend the productive life of fabs.
Computing power has experienced exponential growth over the last 70 years. This has largely been achieved through transistor scaling. Due to a continuous reduction in the size of transistors, engineers have been able to pack more and more of them onto a single chip[1]. This has led to faster, more powerful, and more energy-efficient devices. Improvements in fabrication processes and materials, along with better circuit design techniques, have enabled this scaling. As transistors have become smaller and more densely packed, we have started to reach limitations caused by the laws of physics.
As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar transistor architectures toward 3D devices. Gate-all-around (GAA) architectures are an example of this type of 3D device [2]. In a GAA transistor, the gate oxide surrounds the channel in all directions. A key process during the fabrication of GAA transistors involves the channel release step.