Memory cells – the chip components that store electronic data – include short-term volatile (such as DRAM) and long-term non-volatile (such as flash) storage types. DRAM is the mainstay for “working” (active) memory, while flash memory is used to store large amounts of data in a compact form.
To increase device density for more storage capacity, DRAM features continue to shrink, and NAND flash has moved to 3D architectures, which raise additional processing challenges. For example, the numerous layers in 3D NAND are vulnerable to stress, and any imperfections in the high aspect-ratio channels can create electrical shorts and interference. Production of newer memory types that bridge the gap between active and storage classes is also difficult due to the use of novel, hard-to-process materials. As a result, exceptional process control, flexibility, and productivity are needed.
By leading in innovation, Lam ensures our memory solutions meet the evolving demands of technology. One of the areas where we are innovating to meet the surge in demand for AI, VR, AR, and electric vehicles is our High Bandwidth Memory (HBM) technology. HBM embodies the future of high-performance computing with its 3D stacking and cutting-edge packaging, promising unparalleled performance and efficiency.
Facing the intricate challenges of advanced memory production, like hybrid bonding on-wafer performance and yield management, our expertise in micro-bumps and through-silicon vias (TSVs) equips us to deliver exceptional process control and productivity.
Related Blog Posts
APRIL 16, 2018
From PCRAM and MRAM to RRAM and more, there’s a whole new alphabet soup of memory technologies making their way to the fab. Fueling this development are technology advances in gaming and mobile products and the growth of cloud computing – important applications that are stretching the capabilities of today’s mainstream memory technologies.
JANUARY 22, 2019
Our increasingly connected and ever “smarter” world generates increasing amounts of data, putting pressure on manufacturers who face new technical challenges in delivering the increasing capacity required for processing and storage. The ALD Tungsten process is helping 3D NAND manufacturers overcome the technical challenges of producing memory chips with higher storage capacity.